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PD 9.1696A
PRELIMINARY
l l l l l
IRL3302
HEXFET(R) Power MOSFET
D
Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150C Operating Temperature Fast Switching
VDSS = 20V
G S
RDS(on) = 0.020W ID = 39A
Description
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100s) Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
39 25 160 57 0.45 10 14 130 23 5.7 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V mJ A mJ V/ns C
Thermal Resistance
Parameter
RqJC RqCS RqJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
2.2 --- 62
Units
C/W
11/18/97
IRL3302
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
DV(BR)DSS/DTJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 20 --- --- --- 0.70 21 --- --- --- --- --- --- --- --- --- --- ---
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.023 VGS = 4.5V, ID = 23A W 0.020 VGS = 7.0V, ID = 23A --- V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 23A 25 VDS = 20V, VGS = 0V A 250 VDS = 10V, VGS = 0V, TJ = 150C 100 VGS = 10V nA -100 VGS = -10V 31 ID = 23A 5.7 nC VDS = 16V 13 VGS = 4.5V, See Fig. 6 --- VDD = 10V --- ID = 23A ns --- RG = 9.5W VGS = 4.5V , --- RD = 2.4W , Between lead, --- 4.5 --- 6mm (0.25in.) nH G from package --- 7.5 --- and center of die contact --- 1300 --- VGS = 0V --- 520 --- pF VDS = 15V --- 190 --- = 1.0MHz, See Fig. 5
Typ. --- 0.022 --- --- --- --- --- --- --- --- --- --- --- 7.2 110 41 89
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 39 --- --- showing the A G integral reverse --- --- 160 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 23A, VGS = 0V --- 62 94 ns TJ = 25C, IF = 23A --- 110 160 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I 23A, di/dt 97A/s, VDD V(BR)DSS, SD
TJ 150C
Starting TJ = 25C, L = 0.49mH
RG = 25W , IAS = 23A.
Pulse width 300s; duty cycle 2%.
IRL3302
1000
TOP TOP VGS VGS 15V 10V 12V 8.0V 10V 6.0V 8.0V 4.0V 6.0V 4.0V 3.0V BOTTOM3.0V 2.5V BOTTOM 2.5V
1000
TOP TOP
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS VGS 15V 10V 12V 8.0V 10V 6.0V 8.0V 6.0V 4.0V 4.0V 3.0V BOTTOM3.0V 2.5V BOTTOM 2.5V
100
2.5V
10 0.1
2.5V
20s PULSE WIDTH TJ = 25 C
10 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 25 C TJ = 150 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 39A
I D , Drain-to-Source Current (A)
1.5
100
1.0
10
0.5
1 2 3 4 5
V DS = 15V 20s PULSE WIDTH 6 7 8
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRL3302
2400
2000
VGS , Gate-to-Source Voltage (V)
VGS = Ciss = Crss = Coss =
0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
15
ID = 23A VDS = 16V
12
C, Capacitance (pF)
1600
Ciss
1200
9
6
800
Coss
400
3
Crss
0 1 10 100
0 0 10 20 30 40 50
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
TJ = 150 C
I D , Drain Current (A)
10us
100 100us
10
10
1ms
TJ = 25 C TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
1 0.5
V GS = 0 V
1.0 1.5 2.0
1
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRL3302
40
300
EAS , Single Pulse Avalanche Energy (mJ)
TOP
250
I D , Drain Current (A)
30
BOTTOM
ID 10A 15A 23A
200
20
150
100
10
50
0 25 50 75 100 125 150
0 25 50 75 100 125 150
TC , Case Temperature ( C)
Starting TJ , Junction Temperature( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Maximum Avalanche Energy Vs. Drain Current
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.02 0.01
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL3302
R DS (on), Drain-to-Source On Resistance W ) (
RDS(on), Drain-to-Source On Resistance ( W )
0.022
0.020
VGS = 4.5V
0.021
0.019
0.020
0.018
0.019
0.017
0.018
0.016
VGS = 7.0V
0.017
I D = 39A
0.015
0.016 0 10 20 30 40
0.014 4 5 6 7 8 9 10
A
I D , Drain Current (A)
V G S , Gate-to-Source V oltage (V )
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
IRL3302
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
2.87 (.11 3) 2.62 (.10 3) 10.54 (.415) 10.29 (.405) 3.7 8 (.149 ) 3.5 4 (.139 ) -A 6.47 (.255) 6.10 (.240) -B4.69 (.185 ) 4.20 (.165 ) 1.32 (.052) 1.22 (.048)
4 15.24 (.60 0) 14.84 (.58 4)
1.15 (.04 5) M IN 1 2 3
LE A D A S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - SOURCE 4 - D R A IN
14.09 (.55 5) 13.47 (.53 0)
4.06 (.160) 3.55 (.140)
3X 3X 1 .40 (.0 55) 1 .15 (.0 45)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NO TES: 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14.5M , 1 982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H
2.92 (.115) 2.64 (.104)
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y LOT CO DE 9B1M
A
IN TE R N A T IO N A L R E C T IF IE R LO GO ASSEMBLY LOT CODE
PART NUMBER IR F 1 0 1 0 9246 9B 1M
D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97

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